彭鹏-深圳理工大学材料科学与能源工程学院

彭鹏

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职称：博士后

电子邮件：pengzhw@hotmail.com

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工作签名：

前海外职称/职务：韩国基础科学研究院博士后

所在学院：材料科学与能源工程学院

彭鹏博士2019年毕业于东北师范大学，师从中国科学院化学研究所的刘云圻院士和东北师范大学的汤庆鑫教授。自2019年起，在韩国基础科学研究院多维碳材料中心从事前沿科学研究工作，合作导师为材料生长理论领域专家丁峰教授。主要研究方向是高指数金属的可控制备，低维材料的CVD生长和光电器件的应用，通过设计定制化的单晶高指数金属晶面，调控低维材料的生长衬底，得到一系列系统性的创新研究成果。迄今，他已在国内外高水平学术期刊上发表研究论文5篇，此外多次参加国内国际重要会议（化学会，NT等）并作学术报告。

研究领域

低维材料的可控制备和应用；高指数单晶金属的可控制备

学习经历：

2014-2019,东北师范大学/中国科学院化学研究所,凝聚态物理,博士

2011-2014,中北大学,物理电子学,硕士

2005-2009,南京信息工程大学，物理学，学士

工作经历：

2023-至今，深圳理工大学（筹），材料科学与能源工程学院，博士后

2019-2022,韩国基础科学研究院，多维碳材料研究中心，博士后

(1)Peng Peng, Suk Woo Lee, Leining Zhang, Fengning Liu, Sungkyun Kim, Zonghoon Lee, Feng Ding, Designed High-Index Copper Films for Wafer-Scale Wrinkle-Free Single-Crystal Graphene Growth, to be submitted to Nat. Mater.

(2)Peng Peng, Hongtao Liu, Bin Wu, Qingxin Tang, Yunqi Liu*, Air-Stable Symmetric Ambipolar Field-Effect Transistors Based on Reduced Graphene Oxide-OTS Self-Assembled Monolayer Heterostructure, ChemNanoMat, 2019, 5, 472–478.

(3)Peng Peng, Hongtao Liu, Bin Wu, Qingxin Tang, Yunqi Liu*, Nitrogen doped graphene with p-type field-effect and its fine modulation, Acta Phys.-Chim. Sin., 2019, 35, 1282–1290.

(4)Leining Zhang, Peng Peng, Feng Ding*, Epitaxial Growth of 2D Materials on High-Index Substrate Surfaces, Adv. Funct. Mater., 2021, 31, 2100503.

(5)Fengning Liu, Pai Li, Hao An, Peng Peng, Ben McLean, Feng Ding*, Achievements and Challenges of Graphene Chemical Vapor Deposition Growth, Adv. Funct. Mater., 2022, 2203191.

地址：深圳市光明区新湖街道北圳路

电话: +86-755-86392288

访问量：

博士后序列

研究领域

学习经历：

工作经历：

(1)Peng Peng, Suk Woo Lee, Leining Zhang, Fengning Liu, Sungkyun Kim, Zonghoon Lee*, Feng Ding*, Designed High-Index Copper Films for Wafer-Scale Wrinkle-Free Single-Crystal Graphene Growth, to be submitted to Nat. Mater.

(2)Peng Peng, Hongtao Liu, Bin Wu*, Qingxin Tang*, Yunqi Liu*, Air-Stable Symmetric Ambipolar Field-Effect Transistors Based on Reduced Graphene Oxide-OTS Self-Assembled Monolayer Heterostructure, ChemNanoMat, 2019, 5, 472–478.

(3)Peng Peng, Hongtao Liu, Bin Wu*, Qingxin Tang*, Yunqi Liu*, Nitrogen doped graphene with p-type field-effect and its fine modulation, Acta Phys.-Chim. Sin., 2019, 35, 1282–1290.

(4)Leining Zhang, Peng Peng, Feng Ding*, Epitaxial Growth of 2D Materials on High-Index Substrate Surfaces, Adv. Funct. Mater., 2021, 31, 2100503.

(5)Fengning Liu, Pai Li, Hao An, Peng Peng, Ben McLean, Feng Ding*, Achievements and Challenges of Graphene Chemical Vapor Deposition Growth, Adv. Funct. Mater., 2022, 2203191.

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(1)Peng Peng, Suk Woo Lee, Leining Zhang, Fengning Liu, Sungkyun Kim, Zonghoon Lee, Feng Ding, Designed High-Index Copper Films for Wafer-Scale Wrinkle-Free Single-Crystal Graphene Growth, to be submitted to Nat. Mater.

(2)Peng Peng, Hongtao Liu, Bin Wu, Qingxin Tang, Yunqi Liu*, Air-Stable Symmetric Ambipolar Field-Effect Transistors Based on Reduced Graphene Oxide-OTS Self-Assembled Monolayer Heterostructure, ChemNanoMat, 2019, 5, 472–478.

(3)Peng Peng, Hongtao Liu, Bin Wu, Qingxin Tang, Yunqi Liu*, Nitrogen doped graphene with p-type field-effect and its fine modulation, Acta Phys.-Chim. Sin., 2019, 35, 1282–1290.